Design and Analysis of 2N4416 n channel JFET Single Stage Amplifier for large bandwidth and low Voltage Gain

Authors

  • Yusuf Abdullahi Umaru Ali Shinkafi Polytechnic Sokoto, Nigeria
  • A.A Sifawa Sokoto State University, Sokoto, Nigeria
  • Sulu H.T Umaru Ali Shinkafi Polytechnic Sokoto, Nigeria
  • M.I Iliyasu Umaru Ali Shinkafi Polytechnic Sokoto, Nigeria

DOI:

https://doi.org/10.31695/IJASRE.2021.34095

Keywords:

Amplifier, Analysis, JFET n channel, Single Stage

Abstract

A bipolar junction transistor (BJT) is a current-controlled device, while a field-effect transistor (FET), is a voltage-controlled device, the bipolar transistor has two principal disadvantages. First, it has low input impedance because of the forward-biased emitter junction.  Secondly, it has a considerable noise level. The field-effect transistor (FET) has a large input impedance which may be more than 100 megaohms, the FET is generally much less noisy than the ordinary or bipolar transistor. In this paper 2N4416 n channel JFET single-stage amplifier was designed, in order to analyze the circuit, important terms and main parameters were determined, the frequency response and bandwidth of the amplifier were also determined and discussed graphically using Multisim 14.2 simulator, the results characterized amplifier with large bandwidth and low voltage gain.

References

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How to Cite

Abdullahi , Y. ., A.A Sifawa, Sulu H.T, & M.I Iliyasu. (2021). Design and Analysis of 2N4416 n channel JFET Single Stage Amplifier for large bandwidth and low Voltage Gain. International Journal of Advances in Scientific Research and Engineering (IJASRE), ISSN:2454-8006, DOI: 10.31695/IJASRE, 7(10), 90–98. https://doi.org/10.31695/IJASRE.2021.34095

Issue

Vol. 7 No. 10 (2021): IJASRE Oct-2021

Section

Articles

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Copyright (c) 2021 Yusuf Abdullahi , A.A Sifawa, Sulu H.T, M.I Iliyasu

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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.